Abstract
Liquid-encapsulated Czochralski-grown GaAs is known to show radial striations. In GaAs:In they can be seen by x-ray topography via fluctuations of the In concentration which cause variations in the lattice constant. Using a high spatial resolution capacitance-voltage technique we investigated In-doped as well as undoped GaAs. It is demonstrated that both materials exhibit striations in the activation behavior of implanted silicon and hence in the threshold voltage of ion-implanted metal-semiconductor field-effect transistors. In the cases investigated here the threshold voltage varied by up to ±12 mV from peak to peak. To our knowledge this is the first time that the effect of striations on the activation behavior of implanted Si is demonstrated in both kinds of substrate material.
Published Version
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