Influence of stress in epitaxial ferrite-garnet films on the processes of radiation defect formation and low-temperature aging of the ion-implanted layers

Abstract

To study the effect of mechanical stresses on the defect formation processes in epitaxial garnet films and on the low-temperature aging of the implanted layer, YIG films of different thicknesses irradiated with B+ ions with an energy of 80 keV were used. The presence of elastic deformation energy, the magnitude of which depends on the film thickness, leads to differences in the disorder of the near-surface layers during ion implantation. After 15 years of low-temperature aging of ion-implanted ferrite-garnet films at room temperature, the appearance of all strain profiles becomes the same and does not depend on the thickness of the implanted films.