Abstract
The influences of Stark Effect and quantum wells thickness on the optical properties of InGaN laser diodes have been studied. The results indicated that the Stark Effect greatly affects the optical properties of InGaN laser diodes, when the quantum wells thickness increases, the Stark Effect leads to deteriorating of the optical proprieties of the InGaN laser diodes. The polarization in the active layer of the InGaN laser diodes has been estimated by the blue shift of the spectral lines. The results shown that the better properties of InGaN laser diodes can be obtained with smaller quantum wells thickness, where more carriers can be restricted in the quantum wells, which leads to a larger recombination rate, which in turn increases the output power of the laser diodes, decreases the threshold current of the laser diodes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
