Abstract
In this study, Cu(In1−xGax)Se2 (CIGS) thin films were deposited at room temperature by one step radio frequency (RF) magnetron sputtering process. An one-stage vacuum annealing process without selenization was performed to improve properties of the films. Influences of sputtering power on composition, structure and electrical properties of the as-deposited and annealed films were investigated. As the sputtering power not exceeding a proper power of 100W, the as deposited and annealed films show near stoichiometric composition and polycrystalline chalcopyrite structure. The annealed films exhibit almost the same composition as the as-deposited ones. All the sputtered and annealed films exhibit uniform and compact surface morphology without peeling and cracking. The electrical conductivity measured in 50–290K range reveal that the 50W and 100W deposited films exhibit metal and semiconductor character, respectively. The 100W deposited film present data consist with thermoionic emission at high temperatures of 200–290K. However, Mott law with the variable range hopping mechanism is predominant in the low temperature region.
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