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Abstract
In this work, Ga2O3 thin films were grown on Al2O3 (0001) substrate by radio frequency magnetron sputtering. The influence of sputtering power on crystalline structure, morphology, transmittance, band gap, and photoluminescence were investigated in detail. X-ray diffraction results showed that the β-Ga2O3 films were oriented along (2¯01) plane, and the crystalline quality improved with increasing sputtering power. Scanning electron microscope images revealed that the proportion of large-size grain increased with increasing sputtering power. The β-Ga2O3 films displayed very high transmittance close to 100% in visible region. Photoluminescence spectra showed that all the films exhibited intense blue and green emission centered at approximately 430 nm and 550 nm originated from the donor-acceptor pair recombination.
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