Abstract
We have investigated the influence of sputtering parameters such as N2 flow ratio, applied dc power and substrate temperature on the formation process of high-quality and low-resistivity HfN film using an ultrahigh-vacuum sputtering system. The obtained film quality was evaluated using X-ray diffraction, X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses. The resistivity values were measured by a four-point probe method. We found that (111) HfN and (100) HfN films with equivalent resistivity to the bulk value can be grown in a single-oriented state at the substrate temperature of 450°C on (111) Si and (001) Si, respectively. Therefore, it is revealed that impurity-free, high-quality HfN film with high crystallinity and low resistivity can be obtained at relatively low substrate temperatures, if appropriate sputtering conditions are satisfied, using an ultrahigh-vacuum sputtering system.
Published Version
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