Abstract

The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures has been studied. An increase in effective mobility mue with a negligible change of sheet carrier density ns after SiN deposition is clearly observed. Our results suggest that the enhancement of mue could be explained under the framework of electrons transfer from the InP sub-channel into InGaAs channel region due to the energy band bending at surface region caused by SiN passivation

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call