Abstract
The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements.
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