Abstract
Stainless steel (SS) foils have successful flexible device applications because of their excellent high‐temperature performance and commercial availability, and they are widely used as flexible substrate materials for Cu(In,Ga)Se2 (CIGS) solar cells. The method used to control metal impurities is crucial for producing high‐quality cells. Herein, CIGS precursor films are deposited on SS foils coated with a SiOx/Ti compound barrier layer by sputtering a CIGS quaternary target. The absorber layer is recrystallized at a high annealing temperature (≈600 °C). The relationship between cell performance and SiOx layer processes is investigated. The diffusion of Fe and Cr in the annealed films is influenced by SiOx layer processes. The proposed CIGS flexible cells obtain better conversion efficiency when thicker SiOx layers are deposited at high sputtering powers.
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