Abstract
Silane was added to an existing WN x PECVD process in different flow ratios to the WF 6, to obtain higher thermal stability of the barrier in comparison to the WN x . The deposition rate rises drastically with increased SiH 4/WF 6 ratios. The ternary compositions were investigated with regard to the sheet resistance and thickness. The X-ray diffraction (XRD) measurements of selected layers with low electrical resistivities in the as-deposited state show a broad amorphous peak like the WN x barrier, indicating an amorphous structure. After characterising the as-deposited state of these samples, thermal treatments of the layers were performed at temperature of 600 °C for 1 h in vacuum.
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