Abstract
HfSiN thin films were prepared by the solid solution of HfN and SiN precursor films through magnetron sputtering. The obtained films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction(XRD) measurements show that the films have amorphous structure in the as-deposited state. Scanning electronic microscopy (SEM) images show that crystalline grain size of the films increases with the annealing temperature. The results show that the resistivity and the components of the HfSiN/Cu/ HfSiN/SiO2/Si film do not have obvious change after being annealing at 550˚C in oxygen, and the HfSiN film can provide good barrier performance for copper wire.
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