Influence of Si content on thermoelectric properties of Mg2(Sn,Si) films by sputtering

Abstract

Mg2(Sn,Si) films with different Si content were prepared by magnetron sputtering. The phase composition, surface and cross-sectional morphology, chemical composition and element distribution, carrier concentration, carrier mobility, electrical conductivity, Seebeck coefficient and power factor of the deposited Mg–Sn–Si films were studied. The results show that the deposited films are composed of Mg2(Sn,Si) solid solution phase and a small amount of metal Mg phase. The room temperature carrier concentration decreases and mobility increases with increasing Si content in deposited Mg–Sn–Si films, respectively. The room temperature electrical conductivity and Seebeck coefficient decreases and increases with increasing Si content, respectively. The deposited Mg2(Sn,Si) films with moderate Si content possess the maximum power factor value of 2.76 mW m−1 K−2 at 303 °C and its room temperature figure of merit reaches the highest value of 0.44. The thermal conductivity decreases with increasing Si content, indicating that the lattice distortion caused by Si doping can reduce the thermal conductivity of the deposited films.