Abstract
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
Highlights
Due to their potential for photo-induced carrier separation [1], various Hetero-Junction Solar Cells (HJSCs) have been experimentally [2, 3] and theoretically [4, 5] investigated Selected doped functional materials are added on each side of the Light Harvesting Material (LHM) to select photo-induced carriers
As predicted from the detailed balance principle [13], if no defect-assisted recombination occurs in LHM and if the cell open circuit voltage (VOC ) equals to LHM’s energy band gap (Eg) divided by elemental electron charge (q) the silicon based and the Perovskite based Solar Cells (PSC) should achieve maximum Photonto-electron Conversion Efficiency (PCE) of 44% and 37%, respectively
The basic current-voltage (J-V ) and capacitance-voltage (C-V ) characteristics of hole transport material (HTM)-free CH3NH3PbI3 based PSCs are studied with drift-diffusion and small signal models [38], which are integrated in Silvaco Atlas simulator [39]
Summary
Due to their potential for photo-induced carrier separation [1], various Hetero-Junction Solar Cells (HJSCs) have been experimentally [2, 3] and theoretically [4, 5] investigated Selected doped functional materials are added on each side of the Light Harvesting Material (LHM) to select photo-induced carriers. HJSCs based on low-cost, easy processed [6,7,8] and highly absorbing [9, 10] semiconductor [11] halide perovskites have led to high Photonto-electron Conversion Efficiency (PCE) rising from 3.8% (2009) up to 22.1% (2016). Nowadays, these values are very close to the record value of silicon based solar cells (25.6%) [12]. The basic current-voltage (J-V ) and capacitance-voltage (C-V ) characteristics of HTM-free CH3NH3PbI3 based PSCs are studied with drift-diffusion and small signal models [38], which are integrated in Silvaco Atlas simulator [39]
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