Abstract
Nano structured carbon nitride thin films were deposited at different RF powers in the range of 50 W to 225 W and constant gas ratio of (argon: nitrogen) Ar:N 2 by RF magnetron sputtering. The atomic percentage of Nitrogen: Carbon (N/C) content and impedance of the films increased from 14.36% to 22.31% and 9 × 10 − 1 Ω to 7 × 10 5 Ω respectively with increase in RF power. The hardness of the deposited films increased from 3.12 GPa to 13.12 GPa. The increase in sp 3 hybridized C–N sites and decrease of grain size with increase in RF power is responsible for such variation of observed mechanical and electrical properties.
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