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Abstract
The damage to A15 Nb3Ge films caused by Ar plasma or Ar+SF6 plasma cleaning has been studied by means of Tc and X-ray diffraction measurements. The degradation of the films was found to depend on the voltage, etching period, SF6 content, and film thickness. The drop in Tc was drastic for thinner films. Broadening of the X-ray diffraction peaks and a shift in the diffraction angle were observed after etching. An enlargement of lattice constant was detected for cathode voltages above 200 V for pure Ar plasma and below 100 V for SF6 plasma. The etch rate for Nb3Ge films in SF6 plasma was more than 100 times larger than that in pure Ar plasma.
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