Abstract
The influence of unintentionally doped carbon impurities of i-GaN layer on the performance of GaN-based p-i-n photodetectors is investigated. The photoluminescence spectra exhibits that the carbon impurities are strongly involved in deep trap level-related yellow luminescence band. The results of secondary ion mass spectroscopy suggest that the residual carbon impurities in the i-layer have great effect on the generation of deep trap levels, and have a strong influence on the spectral responsivity and dark current of photodetectors. Thus, the way to decrease the residual carbon impurity concentration of the i-GaN layer, such as enlarging the growth pressure, can improve the performance of p-i-n photodetectors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
