Abstract
Change in Schottky barrier height (SBH) of Ti/Si surface damaged by CHF 3/O 2 plasma treatment was investigated as a function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the annealing temperature up to 400°C, while SBH of the samples without damage did not change. It was found that the increase in SBH was due to the formation of Ti 5Si 3 under the influence of the plasma-induced damage. At the annealing temperature of 600°C, the SBH values of damaged and undamaged interfaces became almost identical due to C49 TiSi 2 formation.
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