Abstract
The effects of post-etching treatments on Si selective epitaxial growth (SEG) have been studied. In the case of O2 downflow treatment, SEG Si had dislocations and a rough surface. It was found that this abnormal growth was caused by SiO2 formed by the post-etching treatment which could not be removed by diluted hydrogen fluoride (DHF) treatment prior to the SEG process. This SiO2 was not removed due to the existence of carbon at the Si/SiO2 interface which had been implanted by reactive ion etching (RIE). In the case of O2 plasma treatment, there was no carbon at the Si/SiO2 interface, SiO2 was completely removed by DHF, and SEG Si was grown successfully. In conclusion, a new, low-temperature Si surface removal method with precise etching depth control using O2 plasma treatment followed by DHF treatment is demonstrated to be an effective pretreatment for Si SEG.
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