Influence of preparing process on total-dose radiation response of high- k Hf-based gate dielectrics

Abstract

The purpose of this paper is to report some total-dose radiation response experimental results of Hf-based dielectric films including HfON film prepared by ion beam enhanced deposition method (IBAD) and HfO 2 film by ultra high vacuum electron beam evaporation system (UV-EBE). MIS structures with HfON and HfO 2 gate dielectrics were irradiated by10 keV X-rays with the dose from 0 to1 × 10 6 rad (Si). Electrical measurement results showed that trap charge density and interface trap charge density of HfON dielectric films are much smaller than HfO 2 dielectric films, and the flatband and midgap voltage shifts in HfON films are also smaller than that in HfO 2 film. AFM and XRD results show that HfON films are smooth and thermal stability even under 800 °C high temperature annealing.