Abstract
The purpose of this paper is to report some total-dose radiation response experimental results of HfON dielectric films compared with HfO2 dielectric films, then discuss the influence of the added nitrogen element on total-dose radiation tolerance of HfON and HfO2 dielectric films. Results of electrical measurements showed that the equivalent oxide thickness (EOT) of the HfON and HfO2 gate dielectrics was 19.67nm and 8.15nm, respectively. The MIS structures with HfON and HfO2 dielectric films were irradiated with 10keV X-rays. The flatband voltage shifts of HfON MIS structures are much smaller than HfO2 MIS structures under different total-dose from 0 to 3×104Gy(Si).
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