Low-temperature solution-based fabrication of high-k HfO2 dielectric thin films via combustion process

Abstract

HfO2 dielectric is one potential material in advanced microelectronics. Its solution-based fabrication usually requires high annealing temperature to remove residual organic solvent, which limits its applications in flexible electronics. Here a low-temperature and solution-processed high-k HfO2 dielectric was demonstrated. With the assistance of combustion process, amorphous HfO2 films were realized at annealing temperature below 300 °C. XRD, Raman and XPS analyses indicated structural and crystalline properties. Electrical measurements indicated that the films showed leakage current density lower than 5.8 × 10−8 A/m2 at 100 MV/m and breakdown field larger than 500 MV/m. Such low-temperature-processed films were expected to be integrated as high-quality gate dielectric in flexible electronics. Via the assistance of citric acid-based combustion method, solution-processed amorphous HfO2 dielectric films were realized at relatively low annealing temperature below 300 °C. Films showed smooth surfaces and good dielectric and breakdown properties