Abstract
The influence of preparation parameters on the particle size of nanosized silicon (n-Si) produced by laser-induced chemical vapour deposition (LICVD) was studied. The optimum parameters for synthesizing the right sized n-Si have been obtained, and they are as follows. The power density of CO 2 laser is 1500 W/cm 2. The silane (SiH 4) concentration is 10 vol%. The dilution gas is argon of high purity. The flow rate of reactant gases is 100 sccm. And the pressure of the reaction chamber is 200 Torr. The particle size of n-Si prepared by LICVD can be varied in the range from 10 to 100 nm depending on the selection of preparation parameters.
Published Version
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