Abstract
AbstractGrowth experiments with GaN in the system Ga/HCl/NH3/He or H2 were carried out in a reactor with two deposition zones. The extent of the reaction in the first zone, called the predeposition zone, is controlled by the NH3 flow rate. In the second zone GaN is deposited epitaxially onto sapphire substrates. The variation of the carrier concentration of these epilayers indicates the dominating effect of impurities especially oxygen in opposition to the widely accepted vacancy model. Due to the high incorporation ratio of donor impurities into the solid a predeposition reduces the impurity content in the vapour phase. A reduction of the free carrier concentration in the epitaxial layers could be achieved. Different behaviour in the two carrier gas systems could be established.
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