Abstract
epitaxial layers with low electron concentrations were obtained from an alkylgallium and arsine system by use of triethylgallium. The highest Hall mobility of the layer, with an electron concentration of at 77°K was 120,000 cm2/V sec. Carrier concentration and carrier type of the layer could be changed in the range of from 1012 to ∼ 1016/cm3 by changing the arsine to triethyl gallium mole ratio introduced into a deposition zone. This fact was expected to be due to the amphoteric impurity sharing between the arsenic and the gallium sites of crystal.Although the extension of carrier concentration to the lower range resulted from impurity compensation, mobility data of the layers of electron concentrations higher than about 1014/cm3 were almost the same as those from the usual system. Dominant acceptor impurities observed in the photoluminescence measurements were discussed and were correlated with amphoteric silicon and carbon impurities. This was consistent with the result obtained on the impurities of the layer by mass spectroscopic analysis.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
