Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

Imosobomeh L Ikhioya,Abdulazeez O Salawu,Okoli D Nnanyere,Eli Danladi

doi:10.46481/jnsps.2022.502

Abstract

In this study, Bismuth (Bi) doped ZnSe thin films were deposited on conducting glass substrates by electrochemical deposition technique and the influence of precursor temperature (room, 50, 55, 60 oC) on their optical and structural properties were systematically studied using the combined effect of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The XRD patterns show a face-centred cubic structure indexed with peaks at (220), (221) and (300). The grain size was in the range of 3.24056 to 4.60481 nm with a lattice constant of 7.189Å. The material deposited at room, 500C, 550C, and 600C reveals agglomeration of particle on the surface of the substrate indicating uniform deposition. The optical spectra show that at different temperature (say room, 50oC, 55oC and 60oC), the absorbance and reflectance of BiZnSe thin films decreases with increase in wavelength of the incident radiation while the transmittance shows direct proportionality with the increase in wavelength. The bandgap demonstrated an increase in the range 1.75-2.25 eV with increase in temperature.

Highlights

Introduction transparent conductive oxide thin filmsMany methods, bothAmong the various II–VI semiconductors, Zinc selenide displays unique optical properties that makes it found application in light-emitting diodes [1,2], magneto-optical devices [3], ultraviolet lasers [4,5], gas sensors [6,7], solar cells [8,9], photocatalysis to mention but a few
The band gap tunability of ZnSe makes its optical properties outstanding and it can be used as chemical and physical, including sputtering [10], thermal evaporation [11], electro-deposition [12, 20, 21], spray pyrolysis [13] and chemical vapour deposition [14] have been used to produce doped and undoped semiconductor thin films
Electrochemical deposition technique (ECD) is used, which involves the deposition of any substance on electrodes due to electrolysis

Summary

Introduction

Among the various II–VI semiconductors, Zinc selenide displays unique optical properties that makes it found application in light-emitting diodes [1,2], magneto-optical devices [3], ultraviolet lasers [4,5], gas sensors [6,7], solar cells [8,9], photocatalysis to mention but a few. The band gap tunability of ZnSe makes its optical properties outstanding and it can be used as chemical and physical, including sputtering [10], thermal evaporation [11], electro-deposition [12, 20, 21], spray pyrolysis [13] and chemical vapour deposition [14] have been used to produce doped and undoped semiconductor thin films. Some of the methods have drawbacks such as toxic reducing agents, and organic solvents, or may require special conditions such as high temperature or low pressure, and sometimes can require costly and time consuming procedure. The electrochemical deposition of thin films is a viable alternative to vacuum-based deposition process.

Objectives

Methods

Results