Abstract
The effect of variation in sputtering power on the structural, morphological, compositional and electrical characteristics of Gadolinium oxide (Gd2O3) thin films deposited on Silicon (Si) substrate using RF magnetron sputtering is presented in this paper. All the deposited films were characterized using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The obtained results indicated that the crystallinity of the films increased with increase in sputtering power and the films deposited at higher power showed the lower rms roughness value. Stoichiometry of the films is closer to the ideal value at a sputtering power of 40 W and further increase in power leads to the formation of an excess concentration of oxygen within the films. Al/Gd2O3/p-Si metal-insulator-semiconductor (MOS) structures were fabricated and the performance of the devices was analyzed using capacitance-voltage (C-V) and current-voltage (J-V) studies. The minimum flat band voltage shift and lowest effective oxide charge density values were obtained from the MOS capacitor with Gd2O3 grown at 40 W power. J-V characterization suggests Schottky and Poole-Frenkel are the dominant conduction in the deposited Gd2O3 films.
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