Abstract
Oxidative annealing in air or reductive annealing in vacuum around 773K of thermally evaporated gallium oxide films produces monoclinic β-Ga2O3 films of distinctly different compositional, optical, morphological and electrical properties. The pristine films prepared by the evaporation of Ga2O3 powders are oxygen deficient, amorphous and absorbing in UV–visible region. The air annealed films are transparent (band gap ∼4.9eV), display nanometric granular morphology and are characterized by <1.0eV extrinsic and 1.2–1.6eV intrinsic activation energies in the Arrhenius plots of electrical conductivity. The growth of Ga2O3 phase on vacuum annealing takes place through the decomposition of Ga2O, one of the constituents of the pristine films. The vacuum annealed films exhibit comparatively lower transparency (band gap <4.5eV), comprise micron-sized dendrites or fibres and have <1.0eV extrinsic and 1.7–2.0eV intrinsic activation energies. The incorporation of these properties results from compositional changes in films induced by annealing in air or vacuum ambient.
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