Abstract

The present article carefully reports the influence of post deposition annealing on photophysical properties of titania (TiO 2 ) thin films, which are developed employing the electron-beam deposition technique. The pristine films are annealed at 100 °C, 200 °C, 300 °C in air and vacuum conditions followed by the investigation of photophysical properties employing several characterization tools viz. XRD, SEM, AFM, EDS, PL, UV Vis. spectrophotometer and source meter. The films showed amorphous nature, whereas Ti and O peaks in the EDS pattern are evident for TiO 2 films deposition. The increase in annealing temperature resulted into an increment in the transmittance (except for 100 °C) of air annealed films, whereas transmittance is decreased for vacuum annealed films. The obtained higher transmittance is suitable for TiO 2 thin films to implicate as buffer layer for solar cell devices where the band gap is observed in a range of 3.06–3.13 eV for air annealed and 2.57–3.05 eV for vacuum annealed films. The electrical conductance of films is enhanced up to 200 °C during annealing possibly due to the removal of traps present in titania thin films. AFM analysis of air annealed films demonstrates a decrement in surface roughness and grain size. Room temperature photoluminescence spectra exhibited strong peaks at 400 nm and 621 nm corresponding to the band edge and Ti 2+ , Ti 3+ , Ti 4+ surface state emissions, respectively. The higher transmittance, lower surface roughness, and ohmic nature of 300 °C air annealed films might attract kind attention for photoanode and optical window or buffer layer applications in dye-sensitized and Cd-based solar cells and charge transport layers in organic and perovskite solar cells. • An impact of air and vacuum annealing on properties of titania films is studied. • The structural analysis reveals the amorphous nature of pristine and annealed films. • Higher transmittance is observed for 300 °C air annealed titania films. • All the titania films showed conspicuous ohmic nature along with lower roughness. • The titania films air annealed at 300 °C may be applied as window or buffer layer.

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