Abstract
Ferroelectric PZT thin films were deposited by liquid delivery MOCVD using a cocktail solution. The cocktail solution consisted of Pb(METHD)2, Zr(METHD)4 and Ti(MPD)(METHD)2 diluted with ethylcyclohexane. The films deposited on Pt/Ti/SiO2/Si at a substrate temperature of 500°C consisted of PZT, PbO and PbPtx, and showed poor properties. However, after annealing at 450°C in air for thirty minutes, the PbPtx phase disappeared while the volume of the PbO phase increased. The hysteresis properties were also improved by annealing at 450°C. After annealing at 600°C in air for thirty minutes, the PbPtx and the PbO phases disappeared perfectly and the PZT thin films showed good hysteresis properties with the remanent polarization of 30 μC/cm2 and the coercive field of 88 kV/cm.
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