Influence of Reactor Pressure on the Formation of PZT Thin Films by Liquid Delivery MOCVD

Abstract

Ferroelectric PZT thin films were fabricated by liquid delivery MOCVD at the reactor pressures of 20, 15, 10 and 5 Torr while the vaporizer pressure was kept to 500 Torr. The deposition rate was approximately 20 nm/min at 5 Torr although it was 10 nm/min at 20 Torr. The Zr content in the films significantly increased with decreasing the reactor pressure while Pb and Ti contents were almost the same. The PZT (35/65) thin films were fabricated at 5 Torr with the Pb-, Zr- and Ti-source supplying rates of 59, 35 and 51 mmol/min. The PZT films deposited at 550C exhibited ferroelectric properties: a remanent polarization of 30 w C/cm 2 and a coercive field of 80 kV/cm.