Influence of plating parameters and solution chemistry on the voiding propensity at electroplated copper–solder interface

Abstract

Interfacial voiding in solder joints formed with Sn–Ag–Cu solder alloys and electroplated Cu was examined as a function of the plating solution chemistry and parameters. Galvanostatic Cu plating of ~10 μm thick Cu films was performed in a commercially available plating solution, and in model generic plating solutions. Analysis of the current voltage behavior along with Secondary Ion Mass Spectrometry studies of organic impurity content of two plated and a wrought copper samples, yielded a conclusion that for certain chemistry solutions (e.g., H2SO4 + CuSO4 + Cl− + PEG) and current density ranges above 2.5 mA cm−2, organic impurities were incorporated into the growing Cu. Solder joints were produced with a variety of electroplated Cu samples. These joints were, then, annealed at a temperature of 175 °C for 1 week, cross sectioned and examined. In general, it was observed that interfacial voiding in laboratory electroplated Cu layers was qualitatively similar to the unexplained voiding observed in some industrially plated Cu products. More specifically, it was found that the propensity for voiding could be correlated with specific electroplating parameters that in turn were associated with significant incorporation of organic impurities in the Cu deposit.