Abstract
The results of experimental studies on ultradispersed silicon carbide synthesis and production upon a hypervelocity silicon-carbon plasma jet influencing a copper barrier are presented. A significant increase of β-SiC content to 88% and average crystallite size from ∼70 to ∼140 nm was found by XRD, SEM, and TEM for energy growth from ∼10.0 to ∼30.0 kJ.
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