Influence of periodically propagating impurity and accompanying time variation of impurity spread on excitation profile of doped quantum dots

Abstract

We investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by the simultaneous oscillations of the impurity coordinate and spatial stretch of the impurity domain. We have considered repulsive Gaussian impurity centers. The ratio of two oscillations (η) has been exploited to understand the nature of the excitation rate. Indeed, it has been found that the said ratio could orchestrate the excitation in a most elegant way. In conjunction with the ratio, the dopant location also plays some important role towards modulating the excitation rate. The present study also indicates attainment of stabilization in the excitation rate as soon as η exceeds a threshold value irrespective of the dopant location. Moreover, prior to the onset of stabilization, we also envisage maximization/minimization in the excitation rate at some typical η values depending on the dopant location. The critical dissection of the characteristics of various impurity parameters provides important insight into the physics underlying the excitation process.