Influence of particle parameters on the melting/migration of silicon particles and turbulent heat transfer during CCZ monocrystalline silicon growth

Abstract

The Continuous Czochralski (CCZ) is a promising approach for preparing low-cost high-quality monocrystalline silicon in the photovoltaic field. To investigate the coupled mechanism of silicon particles melting/migration and melt turbulent heat transfer during the CCZ monocrystalline silicon growth, based on the Euler–Lagrange framework, a three-dimensional transient heat-mass transfer model is developed using the LES method considering the heat exchange between the silicon particles and the silicon melt as well as the particles size change. In addition, we investigated the effects of key silicon particle parameters such as feeding temperature, particle size and feeding speed, on the silicon particles melting/migration and melt turbulent heat transfer. The results show that appropriately increasing the feeding temperature and speed contributes to achieve more concentrated particles distribution and weaken the movement of silicon particles towards the crystalline interface simultaneously, which conduce to eliminate the adverse impact of continuous feeding on monocrystalline silicon growth. And the feeding temperature has a great effect on the temperature fluctuation near the crystalline interface. In addition, when the feeding speed exceeds 1.5m/s, increasing feeding speed has no significant effect on the particles distribution and melting process. Besides, the feeding particle size has a significant effect on the maximum penetration depth of particles. The small silicon particles prefer moving to the crystalline interface driven by thermophoretic force, which is detrimental to the high-quality CCZ monocrystalline silicon growth.