Abstract
The effects of partial dopant ionization on the capacitance–voltage (C–V) characteristics of δ-doped structures have been investigated using self-consistent simulations. The simulation results show that partially ionized δ-doped dopants should produce a much sharper C–V profile compared with the case of fully ionized dopants. The results reveal also that the main factor which determines the spatial resolution and the full width at half maximum of the C–V peak is the spatial extent of the dopant profile rather than the spatial extent of the ground-state wave function. From this, it is suggested that the δ-doped C–V data should be interpreted always with the effect of partial ionization of δ-doped dopants.
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