Abstract
ZnO films have been grown on Si (111) substrates using a modified PAMBD (pulsed arc molecular beam deposition) reactive cathodic arc source employing either O2, N2, or NH3 as carrier gas. Utilizing new source geometry, a two to three fold improvement in source efficiency has been realized. Scanning electron microscopy analysis confirms that this new source configuration gives a significant reduction in marcoparticle contamination and exhibits good crystalline properties for room temperature deposition. ZnO films were grown with this new source and characterized using X-ray diffraction and X-ray photoelectron spectroscopy.
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