Abstract
A series of PbSe thin films grown on a (111)-oriented Si substrate by molecular beam epitaxy were passivated by high-purity oxygen at different annealing temperatures. The photoluminescence intensity increased by more than two orders of magnitude at 4.5μm after annealing the samples in an O2 atmosphere at 350°C. X-ray photoelectron spectroscopy revealed that PbO and SeO2 were formed during the oxidation process of PbSe, thus confirming the formation of the surface passivation layer which resulted in the observed significant increase in PL intensity.
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