Abstract
Influences of oxygen on the formation of hollow voids at the SiC/Si interface are studied by electric current heating of the Si substrate in the temperature range of 650°C to 1000°C. By changing the thickness of the SiC film and the concentration of residual oxygen in the Si substrate, we found that the formation of hollow voids depends on the concentration of residual oxygen, and the formation reaction of hollow voids is enhanced around the oxygen-related defects in the Si substrate.
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