Abstract
Na0.5Bi0.5TiO3 (NBT) thin films were grown with oxygen gas pressure in the range of 5Pa and 100Pa. NBT thin film grown at 30Pa shows improved properties when compared to films grown at other pressures. This film exhibits single phase and good crystallinity. It has the highest dielectric constant of 754 and lowest dielectric loss of 0.21 at 1kHz. It has the lowest leakage current of 2×10−6A/cm2 measured at 50kV/cm electric field. The values of remnant polarization and coercive field, which were measured at room temperature, 10V and 1kHz, are 20μC/cm2 and 160kV/cm respectively. Fatigue study reveals that remnant polarization (+Pr and −Pr) decreases by 15% after 108 switching cycles.
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