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Abstract
The K0.5Bi4.5Ti4O15 (KBTi) and the La-doped K0.5Bi4.5Ti4O15 (KBLT) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The KBLT thin film shows better ferroelectric properties than the KBTi thin film. The values of remnant polarization (2P r) and coercive field (2E c) of the KBLT thin film were 56 μC/cm2 and 343 kV/cm at an electric field of 500 kV/cm, respectively. The leakage current density of the KBLT thin film was approximately one order of magnitude lower than that of the undoped K0.5Bi4.5Ti4O15 thin film. The KBLT thin film shows little change of switchable polarization up to 1.4 × 1010 switching cycles. Therefore, the La-doping is the effective method for improving the ferroelectric properties of the KBTi thin film.
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