Abstract
We have studied the structural and the electrical properties of BiFeO3 (BFO) and (Bi0.9 Eu0.1)(Fe0.9Mn0.1)O3−δ (BEFMO) thin films prepared by using a chemical solution deposition method. X-ray diffraction studies revealed that the BFO and the BEFMO thin films were composed of a rhombohedrally distorted perovskite structure without secondary phases. For the BEFMO thin film, changes in the peak positions and the intensities of some Raman modes were observed. Improved ferroelectric properties were observed in the BEFMO thin film capacitor. The values of remnant polarization (2Pr) and coercive field (2Ec) of the BEFMO thin film were 95 µC/cm2 and 787 kV/cm at a maximum applied field of 1060 kV/cm, respectively. The leakage current density was 7.6 × 10−5 A/cm2 at an electric field of 100 kV/cm, which is about two orders of magnitude lower than that of the BFO thin film.
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