Abstract
—Tungsten Oxide (WO3) thin films were deposited using 99.9% pure tungsten target onto ITO substrate using RF magnetron sputtering in the range oxygen flow rates of 30-50%. The influence of the oxygen flow rate on characteristic of WO3 thin films has been investigated. The transmittance, resistivity, crystallite, roughness, and surface morphology were measured by UV-Vis, 2-point probe, X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), and Field Emission Scanning Electron Microscopy (FE-SEM) respectively. Experimental result showed that the deposition rate of WO3 thin films decreased by increasing oxygen flow rate. A poor crystalinity or more too amorphous of WO3 thin films produces by using various oxygen content. A higher optical transmittance spectrum detected at 30% oxygen content about 86% at wavelength 550nm. Keywords—TungstenOxide(WO3);RFsputtering,sputteringoxygen
Highlights
WO3 have been studied due to their characteristic on optical transmittance since 1980s with the realization WO3 acting as electrochromic materials
Several method for prepared a WO3 have been studied by researcher include vacuum evaporation, pulse laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD), electrodeposition and solgel deposition [3]
The deposition rate of films decreased by increasing oxygen flow rate in the sputtering chamber, at 30% oxygen content WO3 film show highest deposition rate at 1.736nm/min
Summary
WO3 have been studied due to their characteristic on optical transmittance since 1980s with the realization WO3 acting as electrochromic materials. Several method for prepared a WO3 have been studied by researcher include vacuum evaporation, pulse laser deposition, magnetron sputtering, spray pyrolysis, chemical vapor deposition (CVD), electrodeposition and solgel deposition [3]. RF and DC Magnetron Sputtering process widely used due to better adhesion on the substrate and Sputter deposited films have a composition close to source material. Optical properties and microstructure of the sample is depend on the sputtering condition, it is important to control sputtering parameter to obtain a good WO3 thin film for EC materials. In this study we examine influence of oxygen flow on WO3 thin film using 30-50% oxygen flow by using flow ratio of O2/(Ar +O2)
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