Abstract
In this work, the impact of outer oxide charges on the electrostatics of metal-insulator-semiconductor tunnel diodes (MISTD) is discussed. The existence of outer oxide charges will significantly affect the critical voltage V c of MISTD in the strong inversion region. At the bias voltage of V < V c, the MISTD works like a traditional metal-oxide-semiconductor (MOS) capacitor. However, at the bias voltage of V > V c, the MISTD goes to deep depletion. V c is an important boundary for the electrostatics behavior of MISTD. We propose a model, considering the existing outer oxide charges, to calculate V c and compare the calculated results with V c extracted from our devices. V c of our devices is extracted by measuring high-frequency capacitance-voltage (HFCV) at 300 kHz. It is found that the model is able to fit well with the experimental results when the amount of outer oxide charges is in the magnitude of 2.5×1011 cm-2 for our devices. The model is fundamental but helpful for analyzing and designing a MISTD.
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