Abstract
In this article, we present a new configuration of opposed-contact vanadium-compensation semi-insulating (VCSI) 4H–SiC photoconductive semiconductor switch (PCSS) to reduce the input laser energy for operation. The configuration is made up of three parts: the PCSS with optical grating, the convex lens in front of PCSS, and the additional reflector behind PCSS. Periodic surface structures were fabricated on the VCSI 4H–SiC substrate by ultrafine femtosecond laser direct writing to etch optical gratings. The microstructure on the lower surface plays the role of reflection grating, so that the laser forms a specific distribution pattern and enhances the laser absorption. Experiments and simulations show that the triggering efficiency increased 3.7 times compared to PCSS without grating at 532 nm laser. And output voltage can reach 90 % of the input bias voltage. This SiC PCSS optical system significantly reduces the laser energy without reducing the electrodes spacing.
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