Influence of noise-binding energy interplay on the second and third-order nonlinear optical properties of impurity doped quantum dots

Anuja Ghosh,Sk Md Arif,Manas Ghosh

doi:10.1016/j.heliyon.2019.e01785

Anuja Ghosh, Sk Md Arif + Show 1 more

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https://doi.org/10.1016/j.heliyon.2019.e01785

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Journal: Heliyon	Publication Date: May 1, 2019
Citations: 1	License type: cc-by

Affiliation: Visva-Bharati University

Abstract

We inspect the role of binding energy (BE) on second-order and third-order nonlinear optical (NLO) properties of doped GaAs quantum dot (QD). In the study ample stress is given on understanding the role of noise on the manifestations of these NLO properties. The profiles of these NLO properties are analyzed mainly on the basis of variation of two important criteria viz. peak-shift and peak-height as a function of BE. Both these features depend on the presence of noise, its pathway (mode) of introduction and sometimes on the identity of the NLO properties. The findings of the study deem significance in realizing the binding energy-dependence of the said NLO properties of low-dimensional semiconductor materials when noise contribution becomes noticeable.

Highlights

Tremendous enhancement in the research on low-dimensional semiconductor systems (LDSS) e.g. quantum wells (QWLs), quantum wires (QWRs) and quantum dots (QDs) has been envisaged over the last couple of decades
Without noise, a low binding energy (BE) appears to be conducive for emergence of large third-order nonlinear optical susceptibilities (TONOS)
Introduction of noise leads to diverse behavior in the variation of TONOS peak height with gradual enhancement of BE

Summary

Introduction

Tremendous enhancement in the research on low-dimensional semiconductor systems (LDSS) e.g. quantum wells (QWLs), quantum wires (QWRs) and quantum dots (QDs) has been envisaged over the last couple of decades. The resultant effective confinement potential discernibly modifies the nonlinear optical (NLO) properties of LDSS from that of a dopant-free condition. Introduced, conspicuously changes the physical properties of the system through the alteration of the effective confinement potential. TODF deserves importance since an extended inspection which commences from it culminates into understanding the effective optical properties of the dot-matrix composite systems because of dielectric mismatch. In this context BE of LDSS deems importance as any alteration in BE noticeably affects the physical properties of LDSS, including the NLO properties [5, 13, 19]. The study makes a close scrutiny of how the interplay between BE and noise engineers the above NLO properties with substantial thrust on the influence of the noise mode

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Results & discussion

Conclusion