Exploring the nonlinear optical properties of impurity doped quantum dots in the light of noise-binding energy interplay

Abstract

Abstract The variation of some nonlinear optical (NLO) properties of doped GaAs quantum dot (QD) with gradual change in the binding energy (BE) of the system has been examined. In this context special attention has been given on the role of noise that can be applied to the system via additive and multiplicative routes. The profiles of the NLO properties exhibit important features in terms of peak-shift and peak-height. Both of these aspects, however, depend on applied noise and also on the mode of its introduction. Added to this, the final shape of the profiles of above NLO properties against BE noticeably depends on the particular NLO properties concerned. The outcomes of the study assume relevance in understanding the binding energy-dependence of the NLO properties of low-dimensional semiconductor systems when noise contribution becomes significant.