Abstract
In this paper, the resistive switching phenomena in CMOS‐compatible Ta/SiNx/Pt devices with different nitrogen concentrations are investigated. The SiNx resistance random‐access memory (RRAM) devices show self‐compliance RS characteristics with low operation voltage. This paper suggests that a dendric Si dangling‐bond conductive channel and a nitrogen‐rich SiNx layer formed at the Ta/SiNx interface are responsible for the self‐compliance behavior. Lower operation current and energy consumption are achieved by increasing the nitrogen concentration of the SiNx films, which can be ascribed to increase of the band gap induced by the composition variation.
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