Abstract
The characteristics and conductive mechanism of Ta/SiNx/Ta:SiNx/SiNx/Pt resistive random access memory (RRAM) are investigated. Compared with Pt‐doped devices with the same structure, the Ta‐doped devices produce lower operation current in a high resistance state and a larger on/off radio. Furthermore, reliability tests show that the Ta‐doped RRAM has good data retention ability and endurance. Ta clusters are observed in the Ta‐doped SiNx layer through the transmission electron microscope. Also, the X‐ray photoelectron spectra indicate that additional Si dangling bonds and tantalum nitride are present in the Ta‐doped SiNx film. Based on the structure of the device, material analysis, and electrical characteristics, a model is proposed to explain the influence of the doped Ta on resistive switching behavior of the device.
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