Abstract
In this report we successful synthesized MoS2 QDs with different size using 1-Dodecanethiol as sulfur source by one pot method. The X-ray diffraction pattern confirmed the formation of hexagonal MoS2, whereas the transmission electron microscopic analysis established the growth of zero dimension morphology MoS2 QDs with the reaction temperature. The Fourier transforms infrared spectroscopy and X-ray photoelectron spectroscopy proved that the surfaces of MoS2 QDs were coated by thiol and 2H phase MoS2 were formed. Generally, memristor devices have two states (ON state and OFF state) at the same voltage due to voltage dependent resistance change, which properties can be used for storing information. In this paper, a memristor devices with ITO/PEDOT:PSS /MoS2& PVA/Al structure was prepared and the influence of MoS2 QDs size on the electrical properties of as-prepared devices was investigated. The results indicated that the properties of memristor based on MoS2 QDs can be modulated by the technology parameters of MoS2 QDs.
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