Abstract
An investigation is made of changes in the electrophysical parameters of narrow-gap (CdxHg1−xTe x=0.22–0.24) and wide-gap (gallium arsenide, indium and gallium phosphides) semiconductor materials and Schottky-barrier diode structures based on these materials, stimulated by microwave electromagnetic radiation. It is shown that the parameters of materials and device structures may be improved by defect gettering. An analysis is made of possible mechanisms for the interaction between microwave radiation and the objects being studied.
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